Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers
Lai Yun-Feng, Chen Fan, Zeng Ze-Cun, Lin PeiJie, Cheng Shu-Ying, Yu Jin-Ling
       

(color online) Temperature-dependence of (a) set voltage and (b) set current of the DL-RRAM and the 30-nm HfOx-based SL-RRAM.