Thermal stability and data retention of resistive random access memory with HfO<sub><i>x</i></sub>/ZnO double layers

Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers

Lai Yun-Feng^†, Chen Fan, Zeng Ze-Cun, Lin PeiJie, Cheng Shu-Ying, Yu Jin-Ling

(color online) (a) Reproducible I–V curves of the SL-RRAMs and DL-RRAM with the device structural diagram in the inset, (b) – and – fittings for the HRS and LRS of the DL-RRAM. Also, double logarithmic scale I–V curves of the SL-RRAMs with (c) 30-nm HfO_x and (d) 15-nm ZnO are present.