Uniaxial strain-modulated electronic structures of Cd<i>X</i> (<i>X</i> = S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires

Uniaxial strain-modulated electronic structures of CdX (X = S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires

Xiang Linlin, Yang Shenyuan^†

(color online) The strain-induced changes in (a) band gap , (b) band edge energies, and (d) hole effective mass for CdSe NWs. (c) The electron effective mass at CBM as a function of CBM–HH band energy difference for CdSe NWs. The band gaps and effective masses for bulk CdSe are presented by black squares for comparison in panels (a), (c), and (d).