Uniaxial strain-modulated electronic structures of Cd<i>X</i> (<i>X</i> = S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires

Uniaxial strain-modulated electronic structures of CdX (X = S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires

Xiang Linlin, Yang Shenyuan^†

(color online) Isosurfaces of charge density of the VBM state of (a) (CdSe)-4 {10 0}, and (b) (CdSe)-4 {11 0} NWs under different uniaxial strains. The isosurface value is 0.0004 e/Å .