Uniaxial strain-modulated electronic structures of Cd<i>X</i> (<i>X</i> = S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires

Uniaxial strain-modulated electronic structures of CdX (X = S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires

Xiang Linlin, Yang Shenyuan^†

(color online) The variations of (a) lattice parameter c and band gap , (b) band edge energies, (c) electron effective mass , and (d) hole effective mass as a function of diameter d for CdSe NWs. The bulk values of c (black) and (red) are also shown as horizontal dashed lines for comparison in panel (a). The bulk effective masses are presented as spheres at in panels (c) and (d). The blue squares denote the NWs with {11 0} facets in panels (a) and (d). The lines are a guide.