Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique
Tan Li-Ying, Li Fa-Jun, Xie Xiao-Long, Zhou Yan- Ping, Ma Jing
       

(color online) Representative normalized defect concentration from Eq. (11) which is fitted through the data from measured normalized lifetime (blue dotted line). The fitting based on normalized defect concentration is directly proportional to the reciprocal of normalized lifetime on the assumption that the proportionality factor is 1 which renders the fitting simpler.