Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique

Tan Li-Ying, Li Fa-Jun^†, Xie Xiao-Long, Zhou Yan- Ping, Ma Jing

(color online) (a) Image of the GaAs/AlGaAs core–shell NW with core diameter ∼ 50 nm, and AlGaAs shell thickness ∼ 30 nm (Scale bar ∼ 1 μm). (b) GaAs NWs dispersed as a cluster on SiO -on-Si substrate for irradiation. The inset shows the NWs shinning by laser spot.