Surface plasmon-enhanced dual-band infrared absorber for VOx-based microbolometer application
Li Qi1, Yu Bing-qiang1, Li Zhao-feng2, 6, †, Wang Xiao-feng3, 4, ‡, Zhang Zi-chen4, 5, Pan Ling-feng3, 4
       

(color online) (a) The enhancement of the electric field intensity for absorber without cavity and disk, (b) the enhancement of the electric field intensity for absorber with cavity with the parameter H = 500  nm, (c) the enhancement of the electric field intensity at resonant absorption wavelength , (d) the enhancement of the electric field intensity at resonant absorption wavelength .