Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

Xue Yong-Zhou^{1, 2}, Chen Ze-Sheng¹, Ni Hai-Qiao¹, Niu Zhi-Chuan¹, Jiang De-Sheng¹, Dou Xiu-Ming^{1, 2, †}, Sun Bao-Quan^{1, 2, ‡}

(color online) (a) RF spectrum of single InAs/GaAs QD excited by picosecond pulsed laser at 10 K, with an optical gate. The inset shows nonresonant PL spectrum excited by He–Ne laser. (b) RF intensity with (, gate on) and without (, gate off) optical gate of ultra-weak He–Ne laser with a power of 39 nW, as a function of pulsed laser wavelength detuning from QD exciton wavelength.