Double-gate-all-around tunnel field-effect transistor
Zhang Wen-Hao1, Li Zun-Chao1, 2, †, Guan Yun-He1, Zhang Ye-Fei1
       

(color online) (a) Energy band of GAA-TFET along . (b) Energy band of DGAA-TFET along . Both and are 2 nm away from the interface between the outside oxide and silicon.