Double-gate-all-around tunnel field-effect transistor
Drain induced barrier thinning effects of the DGAA-TFET and GAA-TFET versus channel length. φM2 = 4.6 eV, LC= 10 nm, 20 nm,30 nm, 40 nm, 50 nm, 60 nm.
Double-gate-all-around tunnel field-effect transistor |
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Drain induced barrier thinning effects of the DGAA-TFET and GAA-TFET versus channel length. φM2 = 4.6 eV, LC= 10 nm, 20 nm,30 nm, 40 nm, 50 nm, 60 nm. |
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