Double-gate-all-around tunnel field-effect transistor
Zhang Wen-Hao1, Li Zun-Chao1, 2, †, Guan Yun-He1, Zhang Ye-Fei1
       

(color online) Plots of ratio versus channel length (φM2 = 4.6 eV, , 20 nm, 30 nm, 40 nm, 50 nm, 60 nm).