Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition
Ji Zesheng
1
, Wang Lianshan
1, 2, †
, Zhao Guijuan
1
, Meng Yulin
1
, Li Fangzheng
1
, Li Huijie
1
, Yang Shaoyan
1
, Wang Zhanguo
1
(color online) Reflectance versus time of AlN samples measured at 650 nm.