Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer
Li Wei1, Jin Peng2, †, Wang Wei-Ying2, Mao De-Feng2, Pan Xu2, Wang Xiao-Liang2, Wang Zhan-Guo2
       

Temperature dependence of the decay lifetime of localized excitons, the inset shows the temperature-dependent TRPL transients of localized excitons measured at the corresponding peak energy for the Al0.54Ga0.46N films.