Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer
Li Wei1, Jin Peng2, †, Wang Wei-Ying2, Mao De-Feng2, Pan Xu2, Wang Xiao-Liang2, Wang Zhan-Guo2
       

Temperature dependence of PL spectra of Al0.54Ga0.46N epilayer from 6 K to 240 K.