Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials
Yang Jing1, Zhao De-Gang1, 2, †, Jiang De-Sheng1, Chen Ping1, Liu Zong-Shun1, Zhu Jian-Jun1, Li Xiang1, Liu Wei1, Liang Feng1, Zhang Li-Qun3, Yang Hui1, 3, Wang Wen-Jie4, Li Mo4
       

(color online) Schematic of localization luminescence centers in InGaN. The nonradiative recombination defects (shown by empty circles) are located outside the localized luminescence centers, existing in the surrounding areas between the adjacent localization states.