Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials
Yang Jing1, Zhao De-Gang1, 2, †, Jiang De-Sheng1, Chen Ping1, Liu Zong-Shun1, Zhu Jian-Jun1, Li Xiang1, Liu Wei1, Liang Feng1, Zhang Li-Qun3, Yang Hui1, 3, Wang Wen-Jie4, Li Mo4
       

Schematic of the main transitions in GaN, including radiative recombination through intermediate level (acceptor (, interband transition, and nonradiative recombination through nonradiative defects (nonradiative recombination center S).