Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials
Yang Jing1, Zhao De-Gang1, 2, †, Jiang De-Sheng1, Chen Ping1, Liu Zong-Shun1, Zhu Jian-Jun1, Li Xiang1, Liu Wei1, Liang Feng1, Zhang Li-Qun3, Yang Hui1, 3, Wang Wen-Jie4, Li Mo4
       

(color online) Temperature dependencies of integrated PL intensity (a), (c) and peak energy (b), (d) for GaN and InGaN/GaN MQW peaks, respectively. The insets of panels (a) and (c) show the same data of the main panels in another form.