Stable single-mode operation of 894.6 nm VCSEL at high temperatures for Cs atomic sensing

Xiang Lei^{1, 2}, Zhang Xing^{1, †}, Zhang Jian-Wei¹, Ning Yong-Qiang¹, Hofmann Werner³, Wang Li-Jun¹

(color online) Simulation result of mirror loss versus etched depth for the surface-etch 894.6 nm VCSEL.