Influence of interface states, conduction band offset, and front contact on the performance of a-SiC:H(n)/c-Si(p) heterojunction solar cells

Qiao Zhi^†, Ji Jian-Li, Zhang Yan-Li, Liu Hu, Li Tong-Kai

The calculated J–V characteristics of the a-SiC:H(n)/c-Si(p) cells with different work functions of transparent conductive oxide ( , where , , and were assumed.