Influence of interface states, conduction band offset, and front contact on the performance of a-SiC:H(n)/c-Si(p) heterojunction solar cells
Qiao Zhi †, Ji Jian-Li, Zhang Yan-Li, Liu Hu, Li Tong-Kai
       

The (a) and (b) of SHJ solar cells with different interface state densities for the a-SiC:H(n) emitter and a-Si:H(n) emitter.