Influence of interface states, conduction band offset, and front contact on the performance of a-SiC:H(n)/c-Si(p) heterojunction solar cells
Qiao Zhi
†
, Ji Jian-Li
, Zhang Yan-Li
, Liu Hu
, Li Tong-Kai
The gap state distribution in the (a) a-SiC:H(n) and (b) a-Si:H(p) layers in the simulations.