Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution

Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution–regrowth method

Yang Guan-Qing^{1, 2}, Zhang Shi-Zhu^{1, 2}, Xu Bo^{1, 2, †}, Chen Yong-Hai^{1, 2}, Wang Zhan-Guo^{1, 2}

(color online) Growth times versus temperature and the layer structures of samples A and B.