Influence of adatom migration on wrinkling morphologies of AlGaN/GaN micro-pyramids grown by selective MOVPE<xref rid="cpb_26_6_068101_fn1" ref-type="fn">*</xref> <fn id="cpb_26_6_068101_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 61574173), the National Key Research and Development Program, China (Grant No. 2016YFB0400105), the International Science and Technology Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), the International Science and Technology Collaboration Program of Guangzhou City, China (Grant No. 2016201604030055), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), Guangdong Provincial Natural Science Foundation, China (Grant No. 2015A030312011), the Science & Technology Plan of Guangdong Province, China (Grant Nos. 2015B090903062, 2015B010132007, and 2015B010129010), the Science and Technology Plan of Guangzhou, China (Grant No. 201508010048), the Science and Technology Plan of Foshan, China (Grant No. 201603130003), Guangdong-Hong Kong Joint Innovation Project of Guangdong Province, China (Grant No. 2014B050505009), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17), the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics, Sun Yat-sen University (Grant No. 20167612042080001).</p> </fn>

Influence of adatom migration on wrinkling morphologies of AlGaN/GaN micro-pyramids grown by selective MOVPE* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 61574173), the National Key Research and Development Program, China (Grant No. 2016YFB0400105), the International Science and Technology Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), the International Science and Technology Collaboration Program of Guangzhou City, China (Grant No. 2016201604030055), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), Guangdong Provincial Natural Science Foundation, China (Grant No. 2015A030312011), the Science & Technology Plan of Guangdong Province, China (Grant Nos. 2015B090903062, 2015B010132007, and 2015B010129010), the Science and Technology Plan of Guangzhou, China (Grant No. 201508010048), the Science and Technology Plan of Foshan, China (Grant No. 201603130003), Guangdong-Hong Kong Joint Innovation Project of Guangdong Province, China (Grant No. 2014B050505009), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17), the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics, Sun Yat-sen University (Grant No. 20167612042080001).

Chen Jie¹, Huang Pu-Man¹, Han Xiao-Biao¹, Pan Zheng-Zhou¹, Zhong Chang-Ming¹, Liang Jie-Zhi¹, Wu Zhi-Sheng^{1, 2}, Liu Yang^{1, 2, 3, †}, Zhang Bai-Jun^{1, 2, ‡}

(color online) SEM images of the AlGaN/GaN micro-paramids with the growth time of GaN for 20 min and AlGaN for (a) 2 min, (b) 4 min, (c) 6 min, (d) 8 min. Insert illustrates the measurement configuration.