Graphene/Mo2C heterostructure directly grown by chemical vapor deposition<xref rid="cpb_26_6_067901_fn1" ref-type="fn">*</xref> <fn id="cpb_26_6_067901_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 1402342, 11574338, and 11274333), the Hundred Talents Program of Chinese Academy of Sciences, the International Collaboration and Innovation Program on High Mobility Materials Engineering, Chinese Academy of Sciences (Grant No. KGZD-EW-303), and the "Strategic Priority Research Program (B)" of the Chinese Academy of Sciences (Grant No. XDB04040300).</p> </fn>

Graphene/Mo2C heterostructure directly grown by chemical vapor deposition* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 1402342, 11574338, and 11274333), the Hundred Talents Program of Chinese Academy of Sciences, the International Collaboration and Innovation Program on High Mobility Materials Engineering, Chinese Academy of Sciences (Grant No. KGZD-EW-303), and the "Strategic Priority Research Program (B)" of the Chinese Academy of Sciences (Grant No. XDB04040300).

Deng Rongxuan^{1, 2}, Zhang Haoran^{1, 2}, Zhang Yanhui¹, Chen Zhiying¹, Sui Yanping¹, Ge Xiaoming^{1, 2}, Liang Yijian^{1, 2}, Hu Shike^{1, 2}, Yu Guanghui^{1, †}, Jiang Da^{1, ‡}

(color online) OM image of one continuous graphene/Mo₂C heterostructure sample prepared under the conditions: 1-sccm CH₄, 200-sccm H₂, 1000-sccm Ar, 60 min, which is transferred onto a SiO₂/Si substrate (a). Graphene/Mo₂C heterostructure is etched by oxygen plasma afterwards (b). Insets in panels (a) and (b) show Raman spectra of the spot before and after etching, respectively. (d) AFM result for the typical graphene/Mo₂C heterostructure, showing the height profile along the red line in panel (c).