Graphene/Mo2C heterostructure directly grown by chemical vapor deposition<xref rid="cpb_26_6_067901_fn1" ref-type="fn">*</xref> <fn id="cpb_26_6_067901_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 1402342, 11574338, and 11274333), the Hundred Talents Program of Chinese Academy of Sciences, the International Collaboration and Innovation Program on High Mobility Materials Engineering, Chinese Academy of Sciences (Grant No. KGZD-EW-303), and the "Strategic Priority Research Program (B)" of the Chinese Academy of Sciences (Grant No. XDB04040300).</p> </fn>

Graphene/Mo2C heterostructure directly grown by chemical vapor deposition* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 1402342, 11574338, and 11274333), the Hundred Talents Program of Chinese Academy of Sciences, the International Collaboration and Innovation Program on High Mobility Materials Engineering, Chinese Academy of Sciences (Grant No. KGZD-EW-303), and the "Strategic Priority Research Program (B)" of the Chinese Academy of Sciences (Grant No. XDB04040300).

Deng Rongxuan^{1, 2}, Zhang Haoran^{1, 2}, Zhang Yanhui¹, Chen Zhiying¹, Sui Yanping¹, Ge Xiaoming^{1, 2}, Liang Yijian^{1, 2}, Hu Shike^{1, 2}, Yu Guanghui^{1, †}, Jiang Da^{1, ‡}

(color online) OM images of samples after 40 min with methane concentrations of (a) 0.35 sccm, (b) 1 sccm, and (c) 2 sccm, respectively. The inset in panel (c) shows typical Raman spectra of a point on the top of the sample. (d) Schematic diagram of a typical heterostructure growth process. (e) SEM image of graphene and Mo₂C morphology under the following conditions: 1-sccm CH₄, 200-sccm H₂, 1000-sccm Ar, and 40 min; (f) SEM image of Graphene and morphology of Mo₂C stacked partially. (g) SEM image of graphene and morphology of Mo₂C separated.