Improved photovoltaic effects in Mn-doped BiFeO<sub>3</sub> ferroelectric thin films through band gap engineering<xref rid="cpb_26_6_067702_fn1" ref-type="fn">*</xref> <fn id="cpb_26_6_067702_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11274322, 51402318, 61404080, and 61675066), the National Key Technology Research and Development Program of China (Grant No. 2016YFA0201102), and the China Postdoctoral Science Foundation (Grant No. 2016LH0050).</p> </fn>

Improved photovoltaic effects in Mn-doped BiFeO₃ ferroelectric thin films through band gap engineering* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11274322, 51402318, 61404080, and 61675066), the National Key Technology Research and Development Program of China (Grant No. 2016YFA0201102), and the China Postdoctoral Science Foundation (Grant No. 2016LH0050).

Yan Tang-Liu^{1, 3, 4}, Chen Bin^{3, 4, †}, Liu Gang^{3, 4}, Niu Rui-Peng², Shang Jie^{3, 4}, Gao Shuang^{3, 4}, Xue Wu-Hong^{3, 4}, Jin Jing^{1, ‡}, Yang Jiu-Ru^{2, §}, Li Run-Wei^{3, 4}

(color online) (a) Plots of current density versus input voltage in Bi(Fe,Mn)O₃ films doped with various amounts of Mn element content. (b) PFM piezoelectric response phase loop for BM1 sample. The insert is ferroelectric domains image of BM1 sample after applying -V poling bias.