Improved photovoltaic effects in Mn-doped BiFeO<sub>3</sub> ferroelectric thin films through band gap engineering<xref rid="cpb_26_6_067702_fn1" ref-type="fn">*</xref> <fn id="cpb_26_6_067702_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11274322, 51402318, 61404080, and 61675066), the National Key Technology Research and Development Program of China (Grant No. 2016YFA0201102), and the China Postdoctoral Science Foundation (Grant No. 2016LH0050).</p> </fn>

Improved photovoltaic effects in Mn-doped BiFeO₃ ferroelectric thin films through band gap engineering* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11274322, 51402318, 61404080, and 61675066), the National Key Technology Research and Development Program of China (Grant No. 2016YFA0201102), and the China Postdoctoral Science Foundation (Grant No. 2016LH0050).

Yan Tang-Liu^{1, 3, 4}, Chen Bin^{3, 4, †}, Liu Gang^{3, 4}, Niu Rui-Peng², Shang Jie^{3, 4}, Gao Shuang^{3, 4}, Xue Wu-Hong^{3, 4}, Jin Jing^{1, ‡}, Yang Jiu-Ru^{2, §}, Li Run-Wei^{3, 4}

(color online) (a) XRD –2 scan patterns of BiFeO₃ (black), BiFe_0.9Mn (blue), BiFe_0.7Mn (red), and BiFe_0.5Mn (green) thin films deposited on Nb-STO (100) substrates. The peaks are indexed as B for BFMO, S for Nb-STO. The left image is the enlarged view of XRD image. (b) AFM images of BiFe Mn O (x = 0, 0.1, 0.3, 0.5) thin films.