Tunable charge density wave in TiS<sub>3</sub> nanoribbons<xref rid="cpb_26_6_067302fn1" ref-type="fn">*</xref><fn id="cpb_26_6_067302fn1"><label>*</label><p>Project supported by the National Young 1000-Talent Plan and the National Natural Science Foundation of China (Grant Nos. 61322407, 11474058, and 61674040).</p></fn>

Tunable charge density wave in TiS₃ nanoribbons**

Project supported by the National Young 1000-Talent Plan and the National Natural Science Foundation of China (Grant Nos. 61322407, 11474058, and 61674040).

Huang Ce^{1, 2}, Zhang Enze^{1, 2}, Yuan Xiang^{1, 2}, Wang Weiyi^{1, 2}, Liu Yanwen^{1, 2}, Zhang Cheng^{1, 2}, Ling Jiwei^{1, 2}, Liu Shanshan^{1, 2}, Xiu Faxian^{1, 2, 3, †}

(color online) Gate-tuned CDW transitions in thin TiS nanoribbon. (a) Temperature-dependent resistance at various gate voltages from V to 70 V except 40 V in a 15-nm device. Inset: the enlarged view of the R–T curve at low temperature regime. (b) Temperature-dependent logarithmic derivative of R–T under different . Right panel, the curves are multiplied by 10 times to display the evolution of CDW phase transition under external gate voltages. (c) The gate voltage dependence of transition temperature and .