Tunable charge density wave in TiS<sub>3</sub> nanoribbons<xref rid="cpb_26_6_067302fn1" ref-type="fn">*</xref><fn id="cpb_26_6_067302fn1"><label>*</label><p>Project supported by the National Young 1000-Talent Plan and the National Natural Science Foundation of China (Grant Nos. 61322407, 11474058, and 61674040).</p></fn>

Tunable charge density wave in TiS₃ nanoribbons**

Project supported by the National Young 1000-Talent Plan and the National Natural Science Foundation of China (Grant Nos. 61322407, 11474058, and 61674040).

Huang Ce^{1, 2}, Zhang Enze^{1, 2}, Yuan Xiang^{1, 2}, Wang Weiyi^{1, 2}, Liu Yanwen^{1, 2}, Zhang Cheng^{1, 2}, Ling Jiwei^{1, 2}, Liu Shanshan^{1, 2}, Xiu Faxian^{1, 2, 3, †}

(color online) CDW transitions in a nm thick and 15-nm thin TiS nanoribbon. (a) The temperature dependence of the resistance and the logarithmic derivative . The source–drain current nA. Three CDW transitions are evident at 29, 53, and 103 K. Inset: optical microscopy image of the 50 nm–60 nm TiS3 FET. (b) – curves of the thick TiS3 nanoribbon at different temperatures. (c) The temperature dependence of parameter using different fitting region. The red curve is fitted at V, while the blue one is at V. The inset shows the two fitting regions. (d) Temperature dependence of the resistance and the logarithmic derivative in a device whose thickness is lower than 15 nm. The source drain current nA. Unlike the thick nanoribbon, two CDW transitions appear at 46 K and 85 K. Inset: optical image of the FET device.