Flexible electrically pumped random lasing from ZnO nanowires based on metal–insulator–semiconductor structure<xref rid="cpb_26_6_067301fn1" ref-type="fn">*</xref><fn id="cpb_26_6_067301fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61405040, 61675027, 51622205, 51432005, 61505010, and 51502018), the National Key Research and Development Project, Ministry of Science and Technology, China (Grant No 2016YFA0202703), the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201600040), the China Postdoctoral Science Foundation (Grant No. 2016M600976), and the “Thousand Talents” Program of China for Pioneering Researchers and Innovative Teams.</p> </fn>

Flexible electrically pumped random lasing from ZnO nanowires based on metal–insulator–semiconductor structure**

Project supported by the National Natural Science Foundation of China (Grant Nos. 61405040, 61675027, 51622205, 51432005, 61505010, and 51502018), the National Key Research and Development Project, Ministry of Science and Technology, China (Grant No 2016YFA0202703), the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201600040), the China Postdoctoral Science Foundation (Grant No. 2016M600976), and the “Thousand Talents” Program of China for Pioneering Researchers and Innovative Teams.

Que Miao-Ling, Wang Xian-Di, Peng Yi-Yao, Pan Cao-Feng^†

(color online) (a) Energy-band diagram of the ZnO NWs-based MIS device under forward bias, (b) light close-loop cavity randomly formed in the lighting plane, (c) EL spectra of the flexible random laser under different bending degrees, and (d) mechanical robust testing of the flexible random laser, where represents the rate of change in the random lasing intensity, and inset showing the bending setups in the test.