Flexible electrically pumped random lasing from ZnO nanowires based on metal–insulator–semiconductor structure<xref rid="cpb_26_6_067301fn1" ref-type="fn">*</xref><fn id="cpb_26_6_067301fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61405040, 61675027, 51622205, 51432005, 61505010, and 51502018), the National Key Research and Development Project, Ministry of Science and Technology, China (Grant No 2016YFA0202703), the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201600040), the China Postdoctoral Science Foundation (Grant No. 2016M600976), and the “Thousand Talents” Program of China for Pioneering Researchers and Innovative Teams.</p> </fn>

Flexible electrically pumped random lasing from ZnO nanowires based on metal–insulator–semiconductor structure**

Project supported by the National Natural Science Foundation of China (Grant Nos. 61405040, 61675027, 51622205, 51432005, 61505010, and 51502018), the National Key Research and Development Project, Ministry of Science and Technology, China (Grant No 2016YFA0202703), the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201600040), the China Postdoctoral Science Foundation (Grant No. 2016M600976), and the “Thousand Talents” Program of China for Pioneering Researchers and Innovative Teams.

Que Miao-Ling, Wang Xian-Di, Peng Yi-Yao, Pan Cao-Feng^†

(color online) ((a) and (b)) EL spectra of the flexible MIS device based on ZnO nanowires under different applied voltages/currents, (c) current–voltage curve of the flexible device and inset showing EL spectra from 350 nm to 700 nm of the flexible MIS device under injection current of 18.7 mA, and (d) integrated emission intensity changing with the injection current for the flexible MIS device, and the inset showing the device illuminating under 20.5 mA.