Flexible electrically pumped random lasing from ZnO nanowires based on metal–insulator–semiconductor structure<xref rid="cpb_26_6_067301fn1" ref-type="fn">*</xref><fn id="cpb_26_6_067301fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61405040, 61675027, 51622205, 51432005, 61505010, and 51502018), the National Key Research and Development Project, Ministry of Science and Technology, China (Grant No 2016YFA0202703), the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201600040), the China Postdoctoral Science Foundation (Grant No. 2016M600976), and the “Thousand Talents” Program of China for Pioneering Researchers and Innovative Teams.</p> </fn>

Flexible electrically pumped random lasing from ZnO nanowires based on metal–insulator–semiconductor structure**

Project supported by the National Natural Science Foundation of China (Grant Nos. 61405040, 61675027, 51622205, 51432005, 61505010, and 51502018), the National Key Research and Development Project, Ministry of Science and Technology, China (Grant No 2016YFA0202703), the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201600040), the China Postdoctoral Science Foundation (Grant No. 2016M600976), and the “Thousand Talents” Program of China for Pioneering Researchers and Innovative Teams.

Que Miao-Ling, Wang Xian-Di, Peng Yi-Yao, Pan Cao-Feng^†

(color online) (a) -PL spectra from ZnO NWs-based flexible device grown on the PET substrate excited by a nanosecond pulsed laser in 355 nm, and (b) -PL spectrum from 360 nm to 700 nm and the inset showing the setups of photoluminescence experiment.