Flexible electrically pumped random lasing from ZnO nanowires based on metal–insulator–semiconductor structure<xref rid="cpb_26_6_067301fn1" ref-type="fn">*</xref><fn id="cpb_26_6_067301fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61405040, 61675027, 51622205, 51432005, 61505010, and 51502018), the National Key Research and Development Project, Ministry of Science and Technology, China (Grant No 2016YFA0202703), the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201600040), the China Postdoctoral Science Foundation (Grant No. 2016M600976), and the “Thousand Talents” Program of China for Pioneering Researchers and Innovative Teams.</p> </fn>

Flexible electrically pumped random lasing from ZnO nanowires based on metal–insulator–semiconductor structure**

Project supported by the National Natural Science Foundation of China (Grant Nos. 61405040, 61675027, 51622205, 51432005, 61505010, and 51502018), the National Key Research and Development Project, Ministry of Science and Technology, China (Grant No 2016YFA0202703), the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201600040), the China Postdoctoral Science Foundation (Grant No. 2016M600976), and the “Thousand Talents” Program of China for Pioneering Researchers and Innovative Teams.

Que Miao-Ling, Wang Xian-Di, Peng Yi-Yao, Pan Cao-Feng^†

(color online) Schematic diagram (a) and the photograph (c) of the flexible device based on ITO/PET substrate, (b) XRD pattern of the as-synthesized ZnO nanowire arrays, (d) top-view and (e) cross-sectional SEM images of ZnO nanowire arrays grown on PET substrate, (f) HRTEM image of the ZnO nanowire. The inset shows the TEM image of the ZnO nanowire.