Transport properties in monolayer–bilayer–monolayer graphene planar junctions<xref rid="cpb_26_6_067202fn1" ref-type="fn">*</xref><fn id="cpb_26_6_067202fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 11374219), the Jiangsu Provincial Natural Science Foundation, China (Grant No. BK20160007), and the Research Fund for the Doctoral Program of Higher Education of China.</p></fn>

Transport properties in monolayer–bilayer–monolayer graphene planar junctions**

Project supported by the National Natural Science Foundation of China (Grant No. 11374219), the Jiangsu Provincial Natural Science Foundation, China (Grant No. BK20160007), and the Research Fund for the Doctoral Program of Higher Education of China.

Chu Kai-Long¹, Wang Zi-Bo², Zhou Jiao-Jiao¹, Jiang Hua^{1, †}

(color online) Plots of conductance versus Fermi energy for different values of bias potential , 0.10, 0.15. The gate potential in the central region is .15. Panels (a) and (b) correspond to the bottom–bottom and bottom–top configurations, respectively. The other parameters are , B = 100 T, and W = 1.2.