Spin-filter effect and spin-polarized optoelectronic properties in annulene-based molecular spintronic devices<xref rid="cpb_26_6_067201fn1" ref-type="fn">*</xref> <fn id="cpb_26_6_067201fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. U1510132, U1610255, 51401142, and 11604235), the Key Innovative Research Team in Science and Technology of Shanxi Province, China (Grant No. 201605D131045-10), the Natural Science Foundation of Shanxi Province, China (Grant Nos. 2015021027 and 2016021030), the Scientific and Technological Innovation Program of the Higher Education Institutions of Shanxi Province, China (Grant No. 2016140), and the Program for the Outstanding Innovative Teams of the Higher Learning Institutions of Shanxi Province, China.</p> </fn>

Spin-filter effect and spin-polarized optoelectronic properties in annulene-based molecular spintronic devices* *

Project supported by the National Natural Science Foundation of China (Grant Nos. U1510132, U1610255, 51401142, and 11604235), the Key Innovative Research Team in Science and Technology of Shanxi Province, China (Grant No. 201605D131045-10), the Natural Science Foundation of Shanxi Province, China (Grant Nos. 2015021027 and 2016021030), the Scientific and Technological Innovation Program of the Higher Education Institutions of Shanxi Province, China (Grant No. 2016140), and the Program for the Outstanding Innovative Teams of the Higher Learning Institutions of Shanxi Province, China.

Ma Zhiyuan¹, Li Ying¹, Song Xian-Jiang¹, Yang Zhi^{1, †}, Xu Li-Chun¹, Liu Ruiping¹, Liu Xuguang^{2, 3}, Hu Dianyin^{4, 5}

(color online) (a) and (b) The spin photoresponse functions of for the P and AP state when V. Inset: the schematic structure of the gate-controlled device. (c) and (d) The spin photoresponse functions of for the P and AP state when V. is the Bohr radius.