Effect of driving frequency on the structure of silicon grown on Ag (111) films by very-high-frequency magnetron sputtering<xref rid="cpb_26_6_065207fn1" ref-type="fn">*</xref> <fn id="cpb_26_6_065207fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11675118 and 11275136).</p> </fn>

Effect of driving frequency on the structure of silicon grown on Ag (111) films by very-high-frequency magnetron sputtering* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11675118 and 11275136).

Guo Jia-Min¹, Ye Chao^{1, 2, †}, Wang Xiang-Ying³, Yang Pei-Fang¹, Zhang Su³

(color online) AFM height retrace images of silicon on Ag (111) films sputtered by 40.68 MHz, at the powers of (a) 50 W (2D), (b) 50 W (3D) and (c) 150 W (2D), (d) 150 W (3D).