Generation of Fabry–Pérot oscillations and Dirac state in two-dimensional topological insulators by gate voltage
Xu Bin1, †, Li Rao2, Fu Hua-Hua3
       

(color online) (a)–(g) Band structures of the HgTe cylinder, where the periodic boundary condition in the width direction is used and the strip-shape gate voltage is changed from 0 to 1400 meV. (h) Band structure of the HgTe nanoribbon in the open periodic boundary condition in the width direction. States A–D are some chosen states inside the bulk gap.