Strain engineering of electronic and magnetic properties of Ga<sub>2</sub>S<sub>2</sub> nanoribbons

Strain engineering of electronic and magnetic properties of Ga₂S₂ nanoribbons

Wang Bao-Ji¹, Li Xiao-Hua¹, Zhang Li-Wei¹, Wang Guo-Dong¹, Ke San-Huang^{2, †}

(color online) (a) Energy difference between the NM and FM phases and the strain energy of Z₆-Ga₂S₂NR as functions of strain. Note that for strains higher than −12%, the system is in a mixed FM and AFM state. (b) Strain-dependent magnetic moment of Z₆-Ga₂S₂NR. The results for strains higher than −14% are not shown because the magnetic state is not favorable. The insets show the spin distributions under the strains indicated.