Strain engineering of electronic and magnetic properties of Ga<sub>2</sub>S<sub>2</sub> nanoribbons

Strain engineering of electronic and magnetic properties of Ga₂S₂ nanoribbons

Wang Bao-Ji¹, Li Xiao-Hua¹, Zhang Li-Wei¹, Wang Guo-Dong¹, Ke San-Huang^{2, †}

(color online) Calculated band structures of Z₆-Ga₂S₂NRs under various strains: (a) −20%, (b) −14%, (c) −8%, (d) +8%, and (e) +24%. Red and black lines are for spin-up and spin-down states, respectively.