Strain engineering of electronic and magnetic properties of Ga<sub>2</sub>S<sub>2</sub> nanoribbons

Strain engineering of electronic and magnetic properties of Ga₂S₂ nanoribbons

Wang Bao-Ji¹, Li Xiao-Hua¹, Zhang Li-Wei¹, Wang Guo-Dong¹, Ke San-Huang^{2, †}

(color online) Band gap and strain energy of A₁₃-Ga₂S₂NR as functions of the strain applied. Five strain zones (I, II, III, IV, and V) are identified based on the distinct band structures, which correspond to the D-I-D-I-D band gap transitions. The critical strains for the transitions are −12%, −3.5%, −1.7%, and +2.3%, respectively, as indicated by the dotted lines.