Strain engineering of electronic and magnetic properties of Ga<sub>2</sub>S<sub>2</sub> nanoribbons

Strain engineering of electronic and magnetic properties of Ga₂S₂ nanoribbons

Wang Bao-Ji¹, Li Xiao-Hua¹, Zhang Li-Wei¹, Wang Guo-Dong¹, Ke San-Huang^{2, †}

(color online) Strain-induced indirect-direct band gap transition in A₁₃-Ga₂S₂NR. The arrows are from VBM to CBM.