Strain engineering of electronic and magnetic properties of Ga<sub>2</sub>S<sub>2</sub> nanoribbons

Strain engineering of electronic and magnetic properties of Ga₂S₂ nanoribbons

Wang Bao-Ji¹, Li Xiao-Hua¹, Zhang Li-Wei¹, Wang Guo-Dong¹, Ke San-Huang^{2, †}

(color online) Top and side views of the atomic structures of Ga₂S₂NRs with hydrogen-passivated armchair (a) and zigzag (b) edges.