Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1−xSnx films on Si substrate

Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge_1−xSn_x films on Si substrate

Mahmodi H^{1, †}, Hashim M R²

(a) Current–voltage characteristics of the fabricated MSM photodetectors on the samples sputtered at RT and 140 °C, which were measured in the dark and under illumination with (b) the current gain .