Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell<sup><xref rid="cpb_26_4_048104fn1" ref-type="fn">*</xref></sup><fn id="cpb_26_4_048104fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51361022 and 61574072) and the Postdoctoral Science Foundation of Jiangxi Province, China (Grant No. 2015KY12).</p> </fn>

Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell^* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 51361022 and 61574072) and the Postdoctoral Science Foundation of Jiangxi Province, China (Grant No. 2015KY12).

Xiao You-Peng, Wei Xiu-Qin, Zhou Lang^†

(color online) FTIR spectra of the amorphous silicon films deposited with different hydrogen dilutions in a wavelength range of 1900 cm for (a) SiH 4:5, (b) SiH 4:7, (c) SiH 4:9, (d) SiH 4:12, (e) SiH 4:15.