Structural characterization of Al<sub>0.55</sub>Ga<sub>0.45</sub>N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy

Structural characterization of Al_0.55Ga_0.45N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy

Xu Qing-Jun^{1, 2}, Liu Bin^{1, †}, Zhang Shi-Ying^{1, 2}, Tao Tao¹, Xie Zi-Li¹, Xiu Xiang-Qian¹, Chen Dun-Jun¹, Chen Peng¹, Han Ping¹, Zhang Rong^{1, ‡}, Zheng You-Dou¹

(a) Triple-axis ω scan for measuring tilt angle and lateral coherence length from W-H plot for AlGaN layers; (b) Triple-axis ω– scan for measuring heterogeneous strain and vertical coherence length of AlGaN layer from W-H plot for AlGaN layers.