ZnO-based deep-ultraviolet light-emitting devices*

Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 61425021) and the Natural Natural Science Foundation of China (Grant Nos. 11374296, 61376054, 61475153, and 61604132).

Lu Ying-Jie1, Shi Zhi-Feng1, Shan Chong-Xin1, 2, †, Shen De-Zhen2
       

(color online) (a) The schematic illustration of the Au/MgO/MgZnO/n-ZnO structure. (b) Lasing spectra of the device under different injection currents. The inset shows the integrated intensity of the emission at around 330 nm as a function of the injection current.[45]