ZnO-based deep-ultraviolet light-emitting devices<xref rid="cpb_26_4_047703_fn1" ref-type="fn">*</xref> <fn id="cpb_26_4_047703_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 61425021) and the Natural Natural Science Foundation of China (Grant Nos. 11374296, 61376054, 61475153, and 61604132).</p> </fn>

ZnO-based deep-ultraviolet light-emitting devices* *

Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 61425021) and the Natural Natural Science Foundation of China (Grant Nos. 11374296, 61376054, 61475153, and 61604132).

Lu Ying-Jie¹, Shi Zhi-Feng¹, Shan Chong-Xin^{1, 2, †}, Shen De-Zhen²

(color online) EL spectra of the n-MgZnO/MgO/p-GaN heterostructured device with an injection current of 11.5 mA. The two insets show the EL intensity of the 374-nm peak {versus} the injection current and a typical emission photograph of the device, respectively.^[34] Reprinted with permission from (Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes). Copyright (2009) American Chemical Society.