ZnO-based deep-ultraviolet light-emitting devices<xref rid="cpb_26_4_047703_fn1" ref-type="fn">*</xref> <fn id="cpb_26_4_047703_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 61425021) and the Natural Natural Science Foundation of China (Grant Nos. 11374296, 61376054, 61475153, and 61604132).</p> </fn>

ZnO-based deep-ultraviolet light-emitting devices* *

Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 61425021) and the Natural Natural Science Foundation of China (Grant Nos. 11374296, 61376054, 61475153, and 61604132).

Lu Ying-Jie¹, Shi Zhi-Feng¹, Shan Chong-Xin^{1, 2, †}, Shen De-Zhen²

(a) The schematic diagram of the n-MgZnO:Al/i-BeMgZnO/p-GaN heterostructured LED. (b) EL spectra of the UV LED injected with currents from 5 mA to 80 mA. The inset shows the emission peak wavelength versus injection current.^[70]