ZnO-based deep-ultraviolet light-emitting devices*

Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 61425021) and the Natural Natural Science Foundation of China (Grant Nos. 11374296, 61376054, 61475153, and 61604132).

Lu Ying-Jie1, Shi Zhi-Feng1, Shan Chong-Xin1, 2, †, Shen De-Zhen2
       

XRD patterns of BeZnO and ZnBeMgO with the same bandgap value of 4.5 eV.[68]